IEEE-NANO 2013 Paper Abstract

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Paper WeA4.1

Kim, Hye-Young (Trinity College Dublin), Lee, Kangho (Trinity College Dublin), Lee, Jeawoo (Korea University), Kim, Sangwook (Korea University), Kim, Gyu-Tae (Korea University), Duesberg, Georg Stefan (Trinity College Dublin)

The Electrical Characteristics of High Density Arrays of Silicon Nanowire Field-Effect Transistors: Dependence on Wire Spacing

Scheduled for presentation during the Oral Session "Nanoelectronics: Nanotubes and Nanowires I" (WeA4), Wednesday, August 7, 2013, 13:00−13:15, Jade III

13th IEEE International Conference on Nanotechnology, August 5-8, 2013, Shangri-La Hotel, Beijing, China

This information is tentative and subject to change. Compiled on August 20, 2018

Keywords Nanoelectronics, Nanofabrication

Abstract

Since the introduction of silicon nanowire field effect transistors (SiNW FETs) as a new technology for highly integrated circuits, their scaling behavior has been of crucial importance for the continuation of Moore’s law. To date most studies have been of a theoretical nature, as small wire spacing is difficult to achieve experimentally. Here we successfully fabricated and investigated arrays of sub 20 nm SiNW FETs with wire spacing as small as 30 nm for the first time. The channels are contacted using global buried Si electrodes. Using the wafer as the back gate an investigation of the electrical performance of an array of SiNW FETs was undertaken. These experimental observations are supported by simulations using FlexPED.

 

 

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