Keywords: Nanomaterials, Nano-biomedicine
Abstract: A remarkable feature of modern integrated circuit technology is its ability to operate in a stable fashion, with almost perfect reliability, without physical or chemical change. Recently developed classes of semiconductor nanomaterials and associated nanofabrication techniques create an opportunity to engineer the opposite outcome, in the form of ‘transient’ devices that dissolve, disintegrate, degrade or otherwise disappear at triggered times or with controlled rates. Water-soluble transient electronic systems serve as the foundations for applications in zero-impact environmental monitors, 'green' consumer electronic gadgetry and bio-resorbable biomedical implants. This presentation describes the foundational concepts in nanomaterials science, electrical engineering and assembly processes for bio/ecoresorbable electronics in a variety of formats and with a range of functions. Wireless stimulators as temporary pacemakers for minimizing risks after a cardiac surgery, and remote, small-scale sensors as transient monitors for tracking environmental processes provide some system level examples.

Keywords: Nanoelectronics: Emerging material and device challenges in futuristic systems, Nanomaterials, Nanofabrication
Abstract: Defect engineering is a significant method for obtaining artificial material systems with desired physical properties. The defects play a crucial role in controlling the optical and electronic properties of semiconductors giving rise to the novel physical phenomenon. The importance of defects and their formation the in three dimensional semiconductors is well elucidated, however, the two-dimensional semiconductors are still under investigation for the same. Herein, we demonstrate the defect formation in chemical vapor deposition grown atomically thin MoSe2 monolayers during growth. The concentration of Se vacancies shows significant change in the Raman and hotoluminescence (PL) spectra of MoSe2. The characteristic A1g Raman mode at 240 cm-1 shifts towards lower wave number (ranging from 235 to 218 cm-1 with respect to Se vacancies) with appearance of the defect induced peak around 250 cm-1. The PL of MoSe2 varies from 810 nm to 790 nm confirming the controlled in-situ defect formation. Furthermore, we are currently exploring the electro-optical properties of defect activated MoSe2 by fabricating field effect transistor.

Keywords: Nanoelectronics: Emerging material and device challenges in futuristic systems
Abstract: The upward resistance drift in the amorphous phase of phase change memory (PCM) is one of the major hindrances to reliable device operation. Resistance drift is still not well understood and is debatably linked to various physical mechanisms. Hence, further device characterizations on the impact of different factors are crucial to overcome the technological hurdles and clarify the underlying processes. In this work, we performed electrical characterization of capped Ge2Sb2Te5 PCM line cells to evaluate how the cell aspect ratio and applied pulse parameters influence resistance drift and data retention trends. We observed that narrower embedded PCM cells have larger drift exponents than wide cells with similar programmed resistances, possibly due to higher internal stress and slower stress relaxation of the mechanically more confined amorphous zone of the narrow cell. This finding indicates the scaling challenge of embedded cells, which is not experienced by the uncapped cells. We also found that PCM cells programmed with repeated pulses exhibited the lowest drift exponents. Additionally, shorter rise and fall times resulted in lower drift exponents due to the minimal nucleation chances during the sharp falling edges, reducing the crystallization-induced stress. Thus, repeated sharp-edged programming pulses are the most energy-efficient and effective in suppressing the upward resistance drift compared to a single reset pulse. We also conducted thermally accelerated crystallization experiments at 400 K and found the wide cells to drop resistance slowly at the beginning compared to narrow cells, while all cells reached similar final resistance values and crystallized in a similar timeframe. Hence, scaling of embedded cells was not found to limit the long-term data retention time in PCM.

Keywords: Nanoelectronics: Emerging material and device challenges in futuristic systems, Nanosensors & Nanoactuatuators
Abstract: The development of miniaturized and highly sensitive biosensors has gained significant momentum in recent years due to their probable applications in various arenas, including healthcare, environmental monitoring, and food safety. One of the promising nanomaterials that has garnered attention in biosensor design is the carbon nanotube (CNT). CNTs possess unique electrical, chemical, and mechanical properties that make them attractive candidates for biosensing applications. This study aims to model and simulate the design of a biosensor based on CNTFETs, leveraging their exceptional properties for enhanced sensitivity and selectivity. The proposed biosensor design incorporates functionalized CNTs as the sensing element, which can selectively bind to target biomolecules, such as proteins, DNA, or other biomarkers. Through computational modeling and simulation, various aspects of the biosensor design are explored, including the optimization of 32nm CNT functionalization, the immobilization of biomolecular recognition elements, and the transduction mechanism for converting the biorecognition event into a measurable signal. Molecular dynamics reproductions are active to investigate the interactions between the functionalized CNTs and the target biomolecules, providing insights into the binding mechanisms and affinity. Furthermore, finite element analysis is utilized to model the electrical and electrochemical behavior of the biosensor, considering the unique properties of CNTs and their integration into the sensor architecture. The simulations aim to optimize the sensor's performance parameters, such as sensitivity, selectivity, response time, and limit of detection. The results of this study will contribute to the development of a highly sensitive and selective biosensor based on CNTs, with potential applications in early disease diagnosis, environmental monitoring, and food safety analysis. The modeling and simulation approach will guide the experimental design and fabrication of the biosensor, reducing the time and resources required for iterative prototyping. By leveraging the unique properties of CNTs and combining computational modeling with experimental validation, this research paves the way for the development of advanced biosensing technologies with improved performance and reliability.

Keywords: Nanoelectronics: Emerging material and device challenges in futuristic systems, Modeling & Simulation
Abstract: The central premise of this paper is that the proposed model can accurately capture the complex physics of nanowire-based ferroelectric (FE) materials and reproduce key electronic properties, including the effects of threshold voltage on pulse width, amplitude, and potentiationdepression characteristics. Additionally, the model leverages Machine Learning (ML) based artificial neural networks (ANNs) to enhance the speed and accuracy of technology computer-aided design (TCAD) simulations. The FE switching is modelled using the Preisach model to capture the Polarization (P) - Voltage (V) characteristics. In addition, we capture the history-dependent minor loop characteristics to obtain multiple states of polarization. Different ANN regression models such as Conventional-ANN, Lasso Regression, Polynomial Regression, Random Forest Regression, and Kernel Ridge Regression have been developed to assess the worth of best ML-based ANN for improvement in speed and accuracy. We have reported the first-ever implementation of ML-based models and ANNs for Gate-All-Around nanowire-based Fe-FETs, achieving similar accuracy to physics-based TCAD while offering the fastest learning rate and computational speed (in seconds). The presented model could pave the way in ferroelectric-FET research by employing ML-based algorithms.

Keywords: Commercializing nanotechnology, Nanoelectronics: Emerging material and device challenges in futuristic systems, Nanofabrication
Abstract: Carbon nanotube (CNT) based thermal interface materials (TIMs) offer exceptional thermal conductivity, mechanical flexibility, and stability at high temperatures, providing efficient heat dissipation and improved thermal management in electronic devices. This study presents a practical evaluation of CNT-based TIMs compared to a benchmark of a metallic Indium TIM. Indium is a typical non-grease type TIM with high thermal conductivity, low thermal resistance, high thermal cycle count, uniform material, and with a high compressible interface. A commercially available high power amplifier is used to simulate high-intensity thermal cycling use of the TIM. The TIMs are integrated to a prototype printed circuit board assembly (PCBa) consisting of evenly sub inch spaced amplifiers, and passive components. The TIM thermal cycling testing is based on a modified JESD22-A104C standard. The TIM performance is evaluated based on the time taken for the amplifiers to reach 80% of the recommended high powered amplifier temperature. Thermal cycles are iteratively conducted, with a maximum temperature alert halting amplifier power until the assembly cools to room temperature. Infrared radiation (IR) thermal image temperature data at the 80% point is recorded for each cycle to assess TIM performance. The TIM with the least number of counts is referred as the best performing sample. A series of 50 thermal cycles are performed. Other post-processing analysis includes examination of the CNT-based TIM using various imaging techniques, such as SEM to detect delamination of CNT composites with substrates and TEM to assess CNT quality before and after testing. A thermal comparison test between Indium, CNT- silicon, and silicon-graphene-CNT TIMs are performed. The indium TIM had the best preliminary test results with 10 of the 50 counts. It was decided to fabricate the silicon-graphene-CNTs with a perimeter of cushion to increase the compressibility amplifier on the TIM its count number was 12 of 50. The bond line thickness BLT from the inner area of the silicon-graphene-CNT TIM was too large and will be retested to perform better than the Indium TIM benchmark. Samples that will perform better than the Indium TIM pass acceptance testing.

Keywords: Nanorobotics & Nanomanufacturing, Nanofabrication, Nanoelectronics: Emerging material and device challenges in futuristic systems
Abstract: The recent prospective field of application for terahertz (THz) technology includes imaging, sensor systems, and high-speed wireless communication. The design and fabrication, as stated, of terahertz antennas, put the design engineers in various challenges, such as material selection, signal attenuation, and fabrication with highest accuracy of the smallest features. This paper presents the design, simulation, and fabrication of a compact monopole terahertz antenna with physical dimensions of 0.25mm x 0.25mm x 0.44mm. The antenna is developed through Ansys High-Frequency Structure Simulator, and the fabrication process utilizes Two-Photon Polymerization (2PP). The designed antenna was properly simulated in order to achieve good features of the reflection coefficient (S11) and the radiation patterns. This antenna was fabricated with high microscale accuracy by 2PP technology to demonstrate the ability to build complex THz structures at any required resolution. The simulation results showed a good impedance match along a wide bandwidth operating in the THz range with low levels of S11 and good power transmission. For the inspection of the high-resolution features of the fabricated antenna, light and electron microscopes were used, which validated the integrity of the structure.

Keywords: Nanosensors & Nanoactuatuators, Nano-biomedicine, MEMS/NEMS
Abstract: This paper reports on the development of nanostructure-electrode-based electrochemical sensors for detecting lactate dehydrogenase (LDH). Using an ultrathin nanopore template, gold nanostructured electrodes were fabricated. An on-chip specific chemical surface functionalization process was developed for the sensors for detecting LDH for the first time. Experiments showed the sensitivity has been improved, compared to the electrochemical sensors with plain electrodes. It has been found that at least ~5U/mL (~61 nM) of LDH can be readily detected.

Keywords: Nanosensors & Nanoactuatuators, Nanometrology & Characterization, Nanoelectronics: Emerging material and device challenges in futuristic systems
Abstract: Half-metallicity is a unique feature of spin polarized materials that enables its utilization for spintronics applications due to switching between the metallic and semiconducting behavior upon changing the spin orientation. Half-metallicity of dichalcogenides of the composition MoXY and their capacity for adsorption of different gases will be discussed in this presentation. Transition metal doping of MoXY monolayer introduces significant variations in the band gap, and it enhances its selective adsorption of gases. The work involves analysis of the effect of doping on the gas adsorption energy and distance, charge transferred between a structure and a gas molecule, band structure, and density of states (DOS). The band structure of MoXY reveals substantial variations in its electronic properties upon doping with new bands developed near the Fermi level. Transition metal doping of MoXY dichalcogenide monolayer is a promising pathway for engineering its band gap and utilization for applications related to selective and sensitive gas detection.

Keywords: Nanoelectronics: Emerging material and device challenges in futuristic systems, Nano-acoustic Devices, Processes & Materials, Nanofabrication
Abstract: Abstract—This work represents the extraction process of silk fibroin (SF) aqueous solution from silkworm cocoons and its utilization as a promising natural gate dielectric candidate in organic field-effect transistors (OFETs). SF was combined with a thin HfO2 layer for the demonstration of high-performance flexible OFETs for -5 V operation. OFETs showed excellent p-channel transistor characteristics with a low threshold voltage of -0.38 (±0.20) V and a good on-off current ratio of ~103. Moreover, decent electrical and bending stability were observed in these OFETs. These results indicate that SF can be further utilized as a suitable dielectric for exploration of flexible and eco-friendly OFETs.

Keywords: Nanoelectronics: Emerging material and device challenges in futuristic systems, Modeling & Simulation, Nanomaterials
Abstract: We numerically investigate the role of atomistic inhomogeneity and quantization in low-dimensionality lateral tri-gated AlGaN/GaN FinFET devices. It is shown that atomicity leads to pronounced dependence of the threshold voltage on the barrier layer thickness. This demands the use of non-symmetry preserving models in the calculation of polarization fields and induced interfacial charges in device simulation. The overall simulation framework is primarily based on two modules: i) a fully-atomistic framework to calculate strain and polarization fields, and ii) a full 3-D quantum-corrected Monte Carlo electron transport module to obtain the device’s terminal current-voltage characteristics.

Keywords: Nanoelectronics: Emerging material and device challenges in futuristic systems, Modeling & Simulation, Nanofabrication
Abstract: Phase change memory (PCM) is a non-volatile memory in which data is stored as resistance contrast between amorphous and crystalline phases. Many simulation models have been developed to study crystalline to amorphous transition (reset) and amorphous to crystalline transition (set) operations. Ge₂Sb₂Te₂ (GST) is the most widely used phase change material, which is a p-type semiconductor in both phases. This work presents a finite element simulation platform that uses semiconductor physics to calculate charge carrier concentration during device operation, along with heat transport physics to estimate temperature. Crystallinity is tracked by solving a simple ordinary differential equation. A PCM line cell, which has experienced a reset pulse of 3.5 V, shows melting, bandgap collapse, and amorphization in the middle. Carrier trapping in the amorphous portion and Schottky barrier formation in the amorphous-crystalline boundary are observed. This type of modeling will be particularly useful in investigating carrier kinetics during set and reset operations and charge trapping-detrapping inside the PCM devices.

Keywords: Nanofabrication, Nanomaterials, Nano-optics, Nano-photonics & Nano-optoelectronics
Abstract: Nanomaterials and nanostructures exhibit unique properties that are far different from bulk properties. Our group has utilized these unique properties to enhance signal performance in the detection of biomarkers for biosensing applications. Currently, we are developing metallic nanostructured sensor platforms to obtain ultrasensitive levels of detection. One useful property of metallic nanostructures, such as metallic nanogratings, is the ability to couple incident photons to a metallic/dielectric interface to form concentrated electromagnetic (EM) fields by surface plasmon resonance (SPR). When surrounding fluorescent dye molecules are exposed to these high intensity EM fields, the fluorescent emission intensity can be greatly enhanced to provide much better signal-to-noise ratios, reducing false positives, and improved detection limits, even down to single molecule detection. Our group has been developing a modified microcontact printing process to inexpensively replicate the periodic structure of commercially available DVD discs and Blu-ray discs using polydimethylsiloxane (PDMS). The PDMS gratings are then coated with thin metals (e.g., gold films) to produce plasmonic gratings that can couple light at specific wavelengths and incidence angles, which appear as sharp dips in spectroscopic reflectivity measurements. In addition to the plasmonic gratings, we demonstrate a fabrication method to create additional structure and nanogaps in the plasmonic gratings. Controlled stress is applied to the plasmonic grating resulting in stress-induced structures in the plasmonic gratings. Different levels of stresses cause changes in physical properties of the structure including the sizes depths, and lengths of nanogaps. Nanogaps embedded in plasmonic gratings show much stronger SPR compared to plasmonic gratings without additional structure and nanogaps. Fabrication methods of creating the microstructure and nanogaps parallel to the gratings and perpendicular to the gratings are demonstrated as well as their characterization and properties.

Keywords: Nanofabrication, Nanomaterials, Nanosensors & Nanoactuatuators
Abstract: Recently, co-doping has been proposed as a way to stabilize the orthorhombic phase of HfO2 and improve pyroelectric response. To explore this frontier, the present work characterizes a variety of 10nm thick Zr/Si co-doped HfO2 thin films (abbreviated as HZSO) based on varying compositions and annealing temperatures, using the well researched HZO and HSO as references materials. Ellipsometry, TEM, XRD, and XPS analysis provide insights into the films’ structures and compositions, while electrical analysis reveals associated ferroelectric, pyroelectric, aging, and temperature-induced phenomena. Results show that the pyroelectric coefficients of the HZSO material annealed at 650°C/800°C continuously increased across the Si-doping ALD pulses, peaking at 0.88ALD pulses, with values comparable to those of HSO, which in contrast ages fast than the HZSO. Interestingly, it is also observed that the pyroelectric coefficients decay rapidly after wake-up, then decreases in an increasing order over an extended period. This indicates that HZSO-based devices can be fabricated with high flexibility across doping and annealing gradients, with improved durability and adaptability for various applications.

Keywords: Spintronics
Abstract: Edge extraction is a crucial task in the realms of computer vision and image processing. Numerous algorithms for edge extraction traditionally depend on computationally intensive computations involving first-order or second-order derivatives, which, in turn, demand substantial energy consumption. Consequently, there is a need to explore other alternate methods that can be implemented in-memory and thereby reducing energy consumption. In this work, we explore a novel method of efficient edge detection using in-memory computing with spin-orbit torque magnetic random-access memory (SOT-MRAM). The paper presents a 4 × 1 SOT-MRAM array implementing Ex-OR operations that can be used for extracting edges with 2 × 2 sub-matrices of a binary image followed by voltage comparisons. The proposed method targets low power consumption with minimal circuitry and shows a slight variation in performance metrics as compared to conventional approach of MRAM based edge detection operators such as Sobel, Canny Prewitt and Roberts.

Keywords: Spintronics, Nanoelectronics: Emerging material and device challenges in futuristic systems, Nanomaterials
Abstract: Spintronics, or spin electronics, leverages the intrinsic spin and magnetic moment of electrons to enhance the functionality of solid-state devices. To the best of our knowledge, the magnetic characteristics of Ni-doped GaSb with respect to spintronic applications have not yet been investigated, despite some works having been done using Mn and Fe atoms in the material as dopants. In this work, spin-induced magnetic phenomena in the nonmagnetic semiconductor GaSb are studied using Nickel (Ni) as a dopant. The suggested material structure is simulated using the Quantum Espresso simulation, which calls for the geometrical optimization of Ga-Ni-Sb by the use of GGA-PBE functionals. The band structures and Density of states simulated in the present study demonstrate that Ga1-xNixSb (x = 0.25,0.50) exhibits the promising spintronics behavior which is confirmed from the result in a range of 2~8 in Bohr/magneton unit for the Ni concentration greater than 25%. The bandgap is valued 1.6~1.8 eV for similar doping concentration of Ni. By using the mean field approach it has found that this material exhibit high Curie temperature. Analyzing the asymmetricity of DOS it has been confirmed that this material shows half metallic behavior. An important observation is also attained by studying the total stress, total energy, total force that the structure transforms unstable in the range of 50% to 75% of doping of Ni. Overall, the results obtained from the simulation demonstrate that the partially Ni-doped GaSb (in range of 25 to 50 percentage doping) exhibits the ferromagnetic property having suitable bandgap, hence considered to be a potential spintronic material.

Keywords: Spintronics, Nanomagnetics
Abstract: A spiking neural network (SNN) is a computational model comprised of spiking neurons, inspired by the functionality of the human brain. These networks utilize discrete events called spikes to process information, enabling them to capture the dynamic temporal patterns inherent in data and facilitating efficient event-driven computation. This enables the development of low-power NNs, especially when coupled with bio-plausible local spike-timing-dependent plasticity (STDP) learning algorithms capable of encoding temporal information for complex machine learning tasks. The hardware implementation of STDP utilizing spintronic devices offers low-power solutions to enable efficient and high-performance neuromorphic computing tasks. However, these devices suffer from non-idealities associated with factors such as process variations, material properties, fabrication defects, and environmental conditions, which can degrade their performance. This work presents the impact of device-level variations in STDP using unsupervised learning techniques. The variability analysis incorporates variations in the thickness of the oxide layer, tunnel magnetoresistance, saturation magnetization, and damping of the free layer. Furthermore, the effect of the number of excitatory neurons on the classification accuracy of handwritten digits in the MNIST dataset is investigated. The results show that the accuracy of SNN drops by 9% due to device variations. Understanding the impact of device variations is crucial for optimizing the efficiency and reliability of spintronic-based SNNs, thereby advancing the field of neuromorphic computing.

Keywords: Spintronics, Nanomagnetics, Nanoelectronics: Emerging material and device challenges in futuristic systems
Abstract: Antiferromagnetic (AFM) skyrmions are topologically stable spin textures of small size that have attracted considerable interest for their possible use in spintronic devices including, memories, logics, diodes, and neurons. Owing to low power consumption, negligible stray field, and absence of skyrmion Hall effect (SkHE), AFM skyrmion moves with high speed on nanotrack in comparison of ferromagnetic (FM) skyrmion. Using micromagnetic simulations, we examine the behaviour of AFM skyrmions on a defective nanotrack in this work. Defects have a significant impact on the dynamics of skyrmion and can cause interesting phenomena including pinning, hopping, deformation, and skyrmion passing. We clarify the fundamental processes driving these dynamics, highlighting the interaction between defect-generated local magnetic fields and the intrinsic characteristics of antiferromagnetic skyrmions. Furthermore, to provide insights into the design of sturdy skyrmion-based systems with improved functionality, we investigate methods for manipulating skyrmions when they have flaws. This proposed work advances the understanding of antiferromagnetic skyrmion-based devices.

Keywords: Spintronics, Nanomagnetics, Quantum, Neuromorphic & Unconventional Computing
Abstract: The driving mechanism of AFM skyrmions can significantly impact the performance and energy efficiency of spintronic devices based on AFM skyrmions. In thin films, AFM skyrmions can be effectively moved using spin-transfer torques (STT) and spin–orbit torques (SOT) generated by direct current. Nevertheless, the use of current in these devices gives rise to the Joule heating problem, which undermines their non-volatile characteristic, a crucial advantage in spintronic devices for neuromorphic computing. Therefore, it is necessary to investigate the alternative driving mechanisms for developing energy-efficient skyrmion based devices. In this work, skyrmion dynamics under Dzyaloshinskii–Moriya interaction (DMI) gradient is studied. It can be observed that creating the DMI gradient is an efficient way to drive AFM skyrmions with small skyrmion Hall angle and a high longitudinal speed. Furthermore, utilizing this approach an artificial neuron can be designed for enhancing energy efficiency in neuromorphic computing systems. This will open a new alternative way to manipulate skyrmions for the development of energy-efficient skyrmion based neuron device

Keywords: Spintronics, Quantum, Neuromorphic & Unconventional Computing
Abstract: The main objective of this work is to study the coupling between spin transitions or excitations and mechanical deformations in micro-opto-electro-mechanical devices to design efficient spin sensors for quantum computers. We report the effect of spin polarization in negatively charged nitrogen-vacancy (NV-) color centers in diamond and in yttrium-iron-garnets integrated with mechanical resonators. Two mechanical resonators consisting of a stoichiometric silicon nitride trampoline and a piezoelectric disk were used. The results clearly show spin transitions and mechanical vibrations of the resonators are coupled through magneto-elastic and magneto-striction effects.

Keywords: Nanoelectronics: Emerging material and device challenges in futuristic systems
Abstract: With the rise of graphene (Gr) since 2004, two-dimensional (2D) have been extensively explored for energy-efficient nanoelectronics due to their novel charge transport properties compared to conventional three-dimensional (3D) bulk materials. However, there are still challenges and issues for practical implementation of 2D materials. Here from the perspective of interfacial design, we take 2D semiconducting MoS2 as an example to review our recent research of energy-efficient nanoelectronics, ranging from synthesis to device demonstration. First, by functionalizing the growth substrate, we can achieve on-demand selective-growth of 2D MoS2 using chemical vapor deposition (CVD) and the electron mobility can be up to 20 cm2/Vs at room temperature. At the interface between MoS2 and SiO2 substrates, an interfacial tension can be induced due to a mismatch of thermal expansion coefficients, which creates an anisotropy of in-plane charge transport [1, 2] as well as a self-formed nanoscroll structure [3]. Second, at the interface between MoS2 and metal contact, a monolayer h-BN decoration can enable novel manipulation of charge transport through quantum tunneling, in contrast with conventional thermionic emission [3]. The contact resistance can be suppressed by both localized and generalized doping using transition metals [4]. Third, at the interface between MoS2 and other 2D materials, band-to-band Zener tunneling and cold-source charge injection can be enabled, giving rise to a superior transport factor (<60 meV/decade) in field-effect transistor (FET) configurations. These novel charge transport can be utilized to overcome the fundamental limit of “Boltzmann tyranny”, and realize tunnel FETs and cold-source FETs with sub-60-mV/decade subthreshold swings [5-7] or novel anti-ambipolar FETs [8]. Fourth, at the interface between MoS2 and ferroelectric or ionic dielectrics, excellent electrostatic gating leads to a superior body factor (<1), and also improves the energy efficiency for transistor operation [9].

Keywords: Nanoelectronics: Emerging material and device challenges in futuristic systems, Nanomaterials, Modeling & Simulation
Abstract: This work proposes an adaptive reference voltage trimming algorithm for yield improvement of ReRAM memory arrays. The proposed method allows calibrating the reference voltage for each die individually post-fabrication, thus, mitigating die-to-die variability that ReRAM is notorious for. It is shown that by trimming the reference voltage to the intersection point of data ’1’ and data’0’, the die yield can be significantly boosted for a given process technology and array specifications.

Keywords: Nanomaterials, Nanometrology & Characterization, Nanofabrication
Abstract: In various industries such as power transmission or cryogenics, there is a growing need for insulating polymeric materials that consistently maintain high dielectric and mechanical properties over a wide temperature range. However, it remains challenging for a single polymer to achieve optimal insulation properties across such extreme conditions. To address this issue, thin films of different polymer-based nanocomposites are under investigation. In our previous work, we have explored the perfomance of polyamic acid (PAA) with 4 wt.% of APTES-coated SiO2 in DMSO solvent with promising results. However, as the concentration of SiO2 fillers plays a vital role in determining the final properties of a composite, the material composition needs to be optimized and further investigations are needed. Therefore, this study investigates the effects of SiO2 concentration on the dielectric and mechanical properties of the nanocomposites. Dielectric materials with variuos concentrations (0, 2, 4, 6, and 8 wt.%) of APTES-coated SiO2 nanoparticles in PAA, with the utilization of DMSO solvent to help the dispersing SiO2 within the PAA matrix, are fabricated and characterized. The thin film samples were fabricated using spin coating, curing, and peeling off from the substrate. Various testing methods were employed to evaluate the material properties. First, the frequency-based dielectric characteristics (dielectric constant and dielectric loss) of the nanocomposites were investigated using an LCR (inductance-capacitance-resistance) meter. Second, high-voltage AC/DC breakdown tests were performed to evaluate the dielectric strength of the nanocomposite thin films. Subsequently, the breakdown structures (or failure points) developed during the tests were characterize using scanning electron microscopy (SEM). Third, tensile tests were performed to determine the mechanical properties (e.g., ultimate strength and Young’s modulus) of the nanocomposites. Fourth, the molecular and inter-molecular structures of the nanocomposites were inspected using FTIR (Fourier-transform infrared spectroscopy). Last, an optical method using digital image correlation (DIC) was employed to measure the coefficient of thermal expansion (CTE) of the nanocomposites. It is expected that the optimized nanocomposites will show enhanced dielectric performance and mechanical properties, making them better suited for a wide range of applications under various operating conditions.

Keywords: Nanomaterials, Nanoelectronics: Emerging material and device challenges in futuristic systems, Nanoenergy, Environment & Safety
Abstract: The prospect of creating ferroelectric or high permittivity nanomaterial devices provides motivation for investigating complex transition metal oxides of the form Ba(Ti,MV)O3, where M = Nb or Ta. We investigated this system by preparing and characterizing novel single-phase nanocrystals of BaTi0.5Nb0.5O3- and BaTi0.5Ta0.5O3-, followed by integration into thin film metalinsulator-metal (MIM) devices as polymer-nanoparticle composites. The devices were tested as capacitors for frequency dependent permittivity, voltage tolerance and linear/non-linear dielectric behavior. In the nanomaterials, a reversible temperature dependent phase transition (non-centrosymmetric to symmetric) is observed in the Raman spectrum in the region 533-583K (260-310 C), for Ba(Ti,Nb)O3 (543K) and Ba(Ti,Ta)O3 the onset is 533K, compared with 390-393K (117-120 C) for bulk BaTiO3. The crystal structure was resolved by examination of the powder XRD and atomic pair distribution function (PDF) analysis of synchrotron total scattering data. PDF allowed the analysis of several possible candidate structures, and to look for evidence of higher symmetry. The feasible phase space that evolves includes the ordered double perovskite structure Ba2(Ti,MV)O6 (M=Nb, Ta) Fm-3m, a disordered cubic structure, as a suitable high temperature analogue, Ba(Ti,MV)O3 Pm-3m, and an orthorhombic Ba(Ti,MV)O3, Amm2, room temperature structure. Fabrication of Ba(Ti,Nb)O3-PVP (PVP = Polyvinylpyrrolidone), and Ba(Ti,Ta)O3-PVP films, and Ba(Ti,Nb)O3-PFA (PFA = polyfurfuryl alcohol) and Ba(Ti,Ta)O3-PFA pellets was possible, followed by MIM devices. Frequency dependent permittivity measurements demonstrated nanocomposites with r in the range 42-55, with losses (tan ) < 0.05, or lower. Conductivity measurements showed the films to be highly resistive, with resistivity up to 945 G (15 V, 100 A). Voltage tolerance measurements showed the films capable of ~kV/mm (leakage threshold 0.1 A), suggesting midrange energy densities. Ferroelectric characterization revealed evidence of non-linear dielectric behavior in BTTO films.

Keywords: Nano-acoustic Devices, Processes & Materials, Modeling & Simulation, Nanoelectronics: Emerging material and device challenges in futuristic systems
Abstract: A new structure of dopingless tunnel field effect transistor (TFET) is presented. The proposed device is a double gate, uses dual source material to enhance the performance of the proposed device and is being named as Source Engineered Dopingless Tunnel FET (SEDL-TFET). The use of source extension with low metal work-function has significantly enhanced the performance of the proposed device. A comparative analysis of the proposed SEDL-TFET device with the conventional DL TFET device has shown significant improvement in ON current ( ION), ION/ IOFF ratio, Sub-threshold swing (SS) and cut-off frequency (fT). The proposed device shows 200 times increase in ION, 2.5 times in ION/ IOFF, 40 times in cut-off frequency, 70 % improvement in SS. Besides this, the dopingless devices are free from doping related problems and can processed at low temperature budgets.

Keywords: Nano-acoustic Devices, Processes & Materials
Abstract: In a range of biomedical applications, polymer matrix nanocomposites (PMNCs) have been used as photoacoustic transmitters that emit acoustic pulses into surrounding media as a result of pulsed laser irradiation of the PMNC. The amplitude and frequency content of the emitted acoustic pulse depend on a range of factors including the optical, thermal and acoustic properties of the composite, the laser pulse characteristics, and the properties of the surrounding media. In this work, photoacoustic emission from a palladium-polydimethylsiloxane (Pd-PDMS) PMNC is studied to assess its use for acoustic stimulation of retinal tissues. For this application, the amplitude of the acoustic pulse should be maximized subject to various optical, thermal and acoustic constraints provided by the surrounding tissues and by the PMNC itself. Aspects of these constraints are considered in this work to provide important information for the design and use of retinal prosthetics.

Keywords: Nanofabrication, Nano-biomedicine
Abstract: Periodontitis is a serious gum disease characterized by the destruction of the bone and tissues that support the teeth. It typically begins with the buildup of bacteria around the teeth and gums. Scaling/root planning and plaque removal are the main conventional treatments associated with periodontitis. However, the use of modern technologies like nanotechnology can contribute innovative exposure to promote tissue regeneration, antibiofilm activity, and targeted drug delivery. In this study, silver nanoparticles loaded with cellulose nanofibers (CNF) and mesoporous bioactive glass are used in the form of hydrogel for periodontitis treatment. Silver nanoparticle is well known for killing microbes by interacting with their cell wall and cytoplasmic membranes. The generation of reactive oxygen species (ROS) is the key factor involved in the mechanism of antimicrobial activity along with the interruption of adenosine triphosphate production, denaturation of ribosomes, and DNA modification. Generally, the properties of mesoporous bioactive glass such as high specific surface area, osteoconductivity, and superior bioactivity make it a promising candidate for pharmaceutical applications. In addition, the properties of bioactive glasses can be improved by incorporating biopolymers into them. In this study, CNF have been chosen due to their biocompatibility, biodegradability, and good mechanical properties. Also, CNF is suitable for hydrogel preparation because of the high-water absorption capacity that comes from the hydroxyl groups. Overall, it is hypothesized that the proposed material produces a beneficial impact on the treatment of periodontitis by exhibiting antibacterial and anti-inflammatory activities.

Keywords: Nanomaterials
Abstract: This study presents a straightforward method for synthesizing NiMn2O4 nanomaterial. The nanomaterial was synthesized through sol-gel method from a mixed Ni/Mn nitrate solution (with a Ni/Mn ratio of 1:2). Characterization of the nanomaterial was carried out using X-ray powder diffraction (XRD), Scanning electron microscopy (SEM), energy dispersive X-ray spectroscopy (EDX), Brunauer-Emmett-Teller (BET) analysis, high resolution transmission electron microscopy (HRTEM) and X-ray photoelectron spectroscopy (XPS). The synthesized NiMn₂O₄ electrode material exhibited a high BET surface area ~ 97.4 m2/g, contributing significantly to its enhanced electrochemical performance in supercapacitor applications. The charge storage capability and cycle stability of the resulting NiMn2O4 nanostructures were investigated via cyclic voltammetry (CV), galvanostatic charge-discharge (GCD), and electrochemical impedance spectroscopy (EIS) in 1.0 M KOH electrolyte. The as-prepared NiMn2O4 nanostructure demonstrating a significantly enhanced specific capacitance of 1270 Fg-1 at a current density of 0.3 Ag-1. Furthermore, the NiMn2O4 electrode demonstrates remarkable cycling stability, retaining 94% of its initial capacitance after 5000 cycles at a current density of 0.7 Ag-1. For supercapacitor application, the NiMn2O4 material delivers a high energy density of 47 Whkg-1 with a power density of 5404 Wkg-1. The superior storage properties of the CdMn2O4 electrode make it a suitable candidate for energy storage applications.

Keywords: Nanomaterials, Modeling & Simulation, Nanoenergy, Environment & Safety
Abstract: The performance of composite current collectors prepared under different process parameters in this paper is investigated by molecular dynamics to provide a reference for the industrial preparation of composite current collectors. In this paper, a Cu-PET sputter deposition model using PET as the substrate and Cu as the deposited metal is established to study the deposition process of the metal on a polymer substrate under different coating process parameters such as incident energy, incident angle and substrate temperature. The results show that increasing the incident energy (1-10 eV) or substrate temperature (300-400 K) or decreasing the incident angle (45-15°) helps to improve the uniformity and surface quality of the composite current collectors.

Keywords: Nanodiamond and nanocarbon structures: materials and devices, Nanomaterials, Nano-optics, Nano-photonics & Nano-optoelectronics
Abstract: Advanced structures like nuclear and solar power plants produce energy in extreme environments at high temperatures, or with strong radiation, and thus require advanced sensors for monitoring. Robust and durable materials are required for effective structural monitoring. The integrity of structures is often monitored using ultrasound, generated by piezoelectric materials or lasers. The baseline test of BSO (Bi12SiO20; BSO) as a transmitter and receiver was promising for high sensitivity and accuracy. In a previous work, our lab used a combination of liquid Fields metal (Bi-In-Sn; FM) and carbon nanofibers (~25 µm thick; CNF) to produce low frequency laser induced ultrasound at roughly 200 kHz. In this work, a BSO sensor was used to receive ultrasound from 1) a FM-CNF laser ultrasound transmitter, and 2) a BSO transmitter. A comparison is made to find which is the most effective at generating ultrasound at ~ 200 kHz. The FM-CNF and BSO results were comparable, situated at a distance of 420 mm and 360 mm from the receiver, producing signals of 53.6 mVpp and 43 mVpp, respectively.